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NUS3055MUTAG
ELECTRICAL CHARACTERISTICS (T A = 25 ° C, Vcc = 6.0 V, unless otherwise specified)
Characteristic
V CC Operating Voltage Range
Supply Current (I CC + I Input ; V CC = 6.0 V Steady State)
Input Threshold (V Input connected to V CC ; V Input increasing)
Input Hysteresis (V Input connected to V CC ; V Input decreasing)
Input Impedance (Input = V Th )
CNTRL Voltage High
CNTRL Voltage Low
CNTRL Current High (V ih = 5.0 V)
CNTRL Current Low (V il = 0.5 V)
Undervoltage Lockout (V CC decreasing)
Output Sink Current (V CC < V Th , V OUT = 1.0 V)
Output Voltage High (V CC = V in = 8.0 V; I Source = 10 mA)
Symbol
V CC(opt)
?
V Th
V Hyst
R in
V ih
V il
I ih
I il
V Lock
I Sink
V oh
Pin
8
1, 8
1
1
1
3
3
3
3
3
7
7
Min
3.0
?
6.65
50
70
1.5
?
?
?
2.5
10
V CC ?1.0
Typ
4.8
0.75
6.85
100
150
?
?
95
10
2.8
33
?
Max
25
1.0
7.08
200
?
?
0.5
200
20
3.0
50
?
Unit
V
mA
V
mV
k W
V
V
m A
m A
V
m A
V
Output Voltage High (V CC = V in = 8.0 V; I Source = 0.25 mA)
Output Voltage High (V CC = V in = 8.0 V; I Source = 0 mA)
V CC ?0.25
V CC ?0.1
Output Voltage Low
V ol
7
?
?
0.1
V
(Input < 6.5 V; I Sink = 0 mA; V CC = 6.0 V, CNTRL = 0 V)
Turn ON Delay ? Input (Note 3)
T ON IN
7
?
?
10
m s
(V Input connected to V CC ; V Input step down signal from 8.0 to
6.0 V; measured to 50% point of OUT)*
Turn OFF Delay ? Input (V Input connected to V CC ; V Input step
T OFF IN
7
?
0.5
1.0
m s
up signal from 6.0 to 8.0 V; C L = 12 nF Output > V CC ? 1.0 V)
Turn ON Delay ? CNTRL (CNTRL step down signal from 2.0
T ON CT
7
?
?
10
m s
to 0.5 V; measured to 50% point of OUT) (Note 3)
Turn OFF Delay ? CNTRL (CNTRL step up signal from 0.5 to
T OFF CT
7
?
1.0
2.0
m s
2.0 V; C L = 12 nF Output > V CC ?1.0 V)
3. Guaranteed by design.
P?CHANNEL MOSFET (T A = 25 ° C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Units
Drain to Source On Resistance
(V GS = ?4.5 V, I D = 600 mA)
(V GS = ?4.5 V, I D = 1.0 A)
Zero Gate Voltage Drain Current
(V GS = 0 V, V DS = ?24 V)
Turn On Delay (Note 4)
(V GS = ?4.5 V, I D = ?1.0 A, R G = 6.0 W , V DS = 15 V)
Turn Off Delay (Note 4)
(V GS = ?4.5 V, I D = ?1.0 A, R G = 6.0 W , V DS = 15 V)
Input Capacitance (Note 3)
(V GS = 0 V, f = 1.0 MHz, V DS = ?15 V)
Gate to Source Leakage Current
(V GS = ± 20 V, V DS = 0 V)
Drain to Source Breakdown Voltage
(V GS = 0 V, I D = ?250 m A)
Gate Threshold Voltage
(V GS = V DS , I D = ?250 m A)
R DS(on)
I DSS
t on
t off
C in
I GSS
V (BR)DSS
V (GS)th
30
?3.0
66
66
11
28
750
± 10
110
110
?1.0
?1.0
m W
m A
ns
ns
pF
nA
V
V
4. Switching characteristics are independent of operating junction temperature.
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